| タイトル | High-purity silicon crystal growth |
| 本文（外部サイト） | http://hdl.handle.net/2060/19850024131 |
| 著者（英） | Ciszek, T. |
| 著者所属（英） | Midwest Research Inst. |
| 発行日 | 1984-10-01 |
| 言語 | eng |
| 内容記述 | Crystal growth parameter effects on minority carrier lifetime and solar cell efficiencies were investigated using high purity techniques such as float zoning. Study objectives include the following: (1) optimize dopants and minority carrier lifetime in FZ material for high efficiency silicon solar cell applications; (2) improve the understanding of lifetime degradation mechanisms (point defects, impurities, thermal history, surface effects, etc.), and (3) crystallographic defect characterization of float zone and ribbon crystals via X-ray topography. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 85N32444 |
| 権利 | No Copyright |
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