| タイトル | Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen |
| 著者（英） | Opila, Elizabeth J. |
| 著者所属（英） | NASA Lewis Research Center|Cleveland State Univ. |
| 発行日 | 1994-03-01 |
| 言語 | eng |
| 内容記述 | The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales. |
| NASA分類 | Inorganic and Physical Chemistry |
| レポートNO | 97N70955
NASA-TM-112024
NAS 1.15:112024 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/535438 |
