| タイトル | Silicon Carbide Diodes Performance Characterization at High Temperatures |
| 著者（英） | Gardner, Brent G.; Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Adams, Jerry |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2004-01-01 |
| 言語 | eng |
| 内容記述 | NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/536127 |
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