| タイトル | Cryogenic, Absolute, High Pressure Sensor |
| 著者（英） | Shams. Qamar A.; Powers, William T.; Chapman, John J. |
| 著者所属（英） | NASA Langley Research Center |
| 発行日 | 2001-06-05 |
| 言語 | eng |
| 内容記述 | A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel. |
| NASA分類 | Instrumentation and Photography |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/538104 |
