| タイトル | Cr(+2) Diffusion Doping in ZnSe |
| 本文（外部サイト） | http://hdl.handle.net/2060/20010000428 |
| 著者（英） | Journigan, Troy D.; Burger, A.; Chen, K.-T.; Payne, S. A.; Chen, H.; Page, R. H.; Schaffers, K. |
| 著者所属（英） | Fisk Univ. |
| 発行日 | 1997-02-01 |
| 言語 | eng |
| 内容記述 | Chromium doped zinc selenides crystals have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which has an emission range of 2-3 pm. In this study, a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 degrees Celsius. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained. The diffusivity was estimated to be about 10-* sq cm/sec using a classical diffusion model. Resistivity was derived from current-voltage measurements and in the 107-10(exp 16) Ohms-cm and increased as function of Cr concentration. |
| NASA分類 | Solid-State Physics |
| レポートNO | URC97069 |
| 権利 | No Copyright |
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