| タイトル | Purification and Crystal Growth of Lead Iodide by Physical Vapor Transport Method |
| 著者（英） | Chen, Y.-F.; Chen, H.; Burger, A.; Chattopadhyay, K.; Wright, G. W.; Chen, K.-T.; Cole, M. |
| 著者所属（英） | Fisk Univ. |
| 発行日 | 1998-02-22 |
| 言語 | eng |
| 内容記述 | Lead iodide (PbI2) is a layered compound semiconductor being developed as room temperature x- and gamma-ray detector. Compared to the more studied material, mercuric iodide, PbI2 has a higher melting temperature and no phase transition until liquid phase which are indications of better mechanical properties. In this study, the source material was purified by the zone-refining process, and the purest section was extracted from center of the the zone-refined ingot to be grown by physical vapor transport (PVT) method. The zone-refined material and as-grown crystals were characterized by optical microscopy and differential scanning calorimetry (DSC) to reveal the surface morphology, purity and stoichiometry. The results shows that both materials are near-stoichiometric composition, with the purity of the as-grown crystals higher than zone-refined materials. The resistivity of the as-grown crystal (10" Omega-cm) was derived from current-voltage (I-V) measurement, and is 10 times higher than the zone-refined materials. Detail results will be presented and discussed. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
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