| タイトル | Sixteen micrometer Infrared Hot Electron Transistor |
| 著者（英） | Lin, T. L.; Park, J. S.; Liu, J. K.; Gunapala, S. D. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1994-01-01
1994 |
| 言語 | eng |
| 内容記述 | ABSTRACT. We have demonstrated a bound to continuum state GaAs/Al(x)Ga(1-x)As infrared hot electron transistor which has a peak response at lambda(sub p) = 16.3 micrometers. An excellent photo-current transfer ratio of alpha(sub p) = 0.12 and very low dark current transfer ratio of alpha(sub d) = 7.2 x 10(exp 5) is achieved at a temperature of T = 60 K. |
| NASA分類 | Electronics and Electrical Engineering |
| レポートNO | 97N71933
NASA-CR-203699
NAS 1.26:203699 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
