| タイトル | Extrinsic germanium photoconductors for far-IR astronomy: Research results and works in progress |
| 著者（英） | Beeman, J. W.; Hansen, W. L.; Haller, E. E. |
| 著者所属（英） | California Univ. |
| 発行日 | 1996-12-01 |
| 言語 | eng |
| 内容記述 | Some Ge:Ga and Ge:Sb photoconductor materials and detectors that are currently under development are reported. The best Ge:Ga devices exhibit dark currents of lower than 200 electrons/s, with a concurrent responsivity of 2 A/W and a detective quantum efficiency (DQE) of 5 percent. For higher backgrounds, an operating temperature of 3 K can be used. This increases the DQE to 7 percent and the responsivity to 4.5 A/W. Investigations were initiated into n-type Ge:Sb as an alternative photoconductive material. Two crystals of Ge:Sb were grown and a number of test detectors were fabricated and evaluated. At 2 K, the best device produced dark currents of less than 100 electrons/s with concurrent responsivity of 1 A/W and DQE of 4 percent, and at 3 K, produced currents of 10(exp 5) electrons/s with a DQE of 7 percent and a responsivity of 4 A/W. Using p-type Ge:Ga crystals, two dimensional monolithic photoconductor arrays are being constructed. Future work will focus on measuring pixel-to-pixel homogeneity, cross talk issues, overall sensitivity and suitability for photometric instruments. |
| NASA分類 | Spacecraft Instrumentation |
| レポートNO | 97N20376 |
| 権利 | No Copyright |
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