| タイトル | Measurement of Thin Film Integrated Passive Devices on SiC through 500 C |
| 著者（英） | Chevalier, Christine T.; Schwartz, Zachary D.; Ponchak, George E.; Alterovitz, Samuel A.; Downey, Alan N. |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2004-01-01 |
| 言語 | eng |
| 内容記述 | Wireless communication in jet engines and high temperature industrial applications requires FD integrated circuits (RFICs) on wide bandgap semiconductors such as Silicon Carbide (SiC). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-SiC substrate. The devices are experimentally characterized through 50 GHz at temperatures of up to 500 C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300 C while the capacitors have a value stable within 10% through 500 C. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/544388 |
