| タイトル | Ka-Band, RF MEMS Switches on CMOS Grade Silicon with a Polyimide Interface Layer |
| 著者（英） | Varaljay, Nicholas C.; Ponchak, George E.; Papapolymerou, John |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2003-01-01 |
| 言語 | eng |
| 内容記述 | For the first time, RF MEMS switcbes on CMOS grade Si witb a polyimide interface layer are fabricated and characterized. At Ka-Band (36.6 GHz), an insertion loss of 0.52 dB and an isolation of 20 dB is obtained. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/545224 |
