| タイトル | Single-Event Effects in Silicon Carbide Power Devices |
| 本文（外部サイト） | http://hdl.handle.net/2060/20150017740 |
| 著者（英） | Ikpe, Stanley; LaBel, Kenneth A.; Kim, Hak; Lauenstein, Jean-Marie; Casey, Megan C.; Phan, Anthony M.; Topper, Alyson D.; Wilcox, Edward P. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2015-06-23 |
| 言語 | eng |
| 内容記述 | This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated. |
| NASA分類 | Electronics and Electrical Engineering; Energy Production and Conversion |
| レポートNO | GSFC-E-DAA-TN24877 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
