| タイトル | Silicon Carbide Power Device Performance Under Heavy-Ion Irradiation |
| 本文（外部サイト） | http://hdl.handle.net/2060/20150020905 |
| 著者（英） | Wilcox, Edward; LaBel, Ken; Casey, Megan; Ikpe, Stanley; Phan, Anthony; Topper, Alyson; Lauenstein, Jean-Marie |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2015-07-16 |
| 言語 | eng |
| 内容記述 | Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices. |
| NASA分類 | Quality Assurance and Reliability; Space Radiation; Electronics and Electrical Engineering |
| レポートNO | GSFC-E-DAA-TN25023 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
