| タイトル | Silicon Technologies Adjust to RF Applications |
| 本文（外部サイト） | http://hdl.handle.net/2060/20150022253 |
| 著者（英） | Reinecke Taub, Susan; Alterovitz, Samuel A. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1994-10-01 |
| 言語 | eng |
| 内容記述 | Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications. |
| NASA分類 | Solid-State Physics |
| レポートNO | E-9322 |
| 権利 | No Copyright |
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