タイトル | Silicon Technologies Adjust to RF Applications |
本文(外部サイト) | http://hdl.handle.net/2060/20150022253 |
著者(英) | Reinecke Taub, Susan; Alterovitz, Samuel A. |
著者所属(英) | NASA Lewis Research Center |
発行日 | 1994-10-01 |
言語 | eng |
内容記述 | Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications. |
NASA分類 | Solid-State Physics |
レポートNO | E-9322 |
権利 | No Copyright |
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