| タイトル | 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C |
| 本文（外部サイト） | http://hdl.handle.net/2060/20150022226 |
| 著者（英） | Beheim, Glenn M.; Chang, Carl W.; Chen, Liang-Yu; Krasowski, Michael J.; Prokop, Norman F.; Meredith, Roger; Spry, David J.; Neudeck, Philip G.; Okojie, Robert S.; Ferrier, Terry; Evans, Laura J. |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2008-05-13 |
| 言語 | eng |
| 内容記述 | The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages. |
| NASA分類 | Solid-State Physics; Electronics and Electrical Engineering |
| レポートNO | GRC-WO-667828 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
|
