| タイトル | Silicon dioxide film deposition by afterglow-plasma-enhanced chemical vapor deposition using triethoxysilane and tetraethoxysilane |
| その他のタイトル | トリエトキシシランとテトラエトキシシランを用いる残光プラズマ増強化学蒸着によるシリカ膜の蒸着 |
| 著者（日） | Shin, Youngsik; 秋山 秦伸; 今石 宣之; Jung, Sangchul |
| 著者（英） | Shin, Youngsik; Akiyama, Yasunobu; Imaishi, Nobuyuki; Jung, Sangchul |
| 著者所属（日） | 九州大学 大学院総合理工学府; 九州大学 大学院総合理工学府; 九州大学 大学院総合理工学府; Sunchon National University |
| 著者所属（英） | Kyushu University Interdisciplinary Graduate School of Engineering Sciences; Kyushu University Interdisciplinary Graduate School of Engineering Sciences; Kyushu University Interdisciplinary Graduate School of Engineering Sciences; Sunchon National University |
| 発行日 | 2003-06-30 |
| 刊行物名 | 九州大学大学院総合理工学報告
Engineering Sciences Reports, Kyushu University |
| 巻 | No. 1 |
| 開始ページ | 1 |
| 終了ページ | 5 |
| 刊行年月日 | 2003-06-30 |
| 言語 | eng |
| 抄録 | Silicon dioxide (SiO2) films were deposited by afterglow-plasma-enhanced CVD using triethoxysilane (TRIES) and tetraethoxysilane (TEOS) as source materials. TRJES has approximately four times higher vapor pressure than TEOS. The growth rate using TRIES was approximately twice as high as that using TEOS under the same operating conditions. The step coverage of film grown by TRIES was better than that by TEOS under a wide range of operating conditions. These results suggest that TRIES is a good candidate for SiO2 films. |
| キーワード | chemical vapor deposition; silica; thin film; afterglow-plasma; triethoxysilane; tetraethoxyxilane; IC; ion bombardment; scanning electron microscope; 化学蒸着; シリカ; 薄膜; 残光プラズマ; トリエトキシシラン; テトラエトキシシラン; IC; イオン衝撃; 走査型電子顕微鏡 |
| 資料種別 | Technical Report |
| ISSN | 1346-7883 |
| SHI-NO | AA0045911001 |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/55738 |
