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Other TitleStatic and dynamic characterization of Silicon carbide power-MOSFET
Author(jpn)佐藤, 宣夫; 山本, 秀和
Author(eng)Satoh, Nobuo; Yamamoto, Hidekazu
Author Affiliation(jpn)千葉工業大学; 千葉工業大学
Author Affiliation(eng)Chiba Institute of Technology; Chiba Institute of Technology
Issue Date2015-01-01
Chiba Institute of Technology
Publication title千葉工業大学研究報告
Report of Chiba Insitute of Technology
Start page23
End page27
Publication date2015-01-01
AbstractWe evaluated and compared the dynamic properties of the megahertz switching of two kinds of commercial valve devices during high-speed operation. The two devices were a silicon (Si) power MOSFET (2SK2847, Toshiba) and a silicon carbide (SiC) power MOSFET (SCT2080KE, Rohm). Because the purpose for both the use and the package side were similar, our focus was mainly on how the Si and SiC materials contributed to the device performance. We evaluated the conversion efficiency in terms of both the energizing loss and the switching loss. Results showed that the SiC power MOSFET had a high withstand voltage and a high threshold voltage and that the electrical resistance of the conduction state was smaller than that of the Si power-MOSFET. The experimentally obtained switching loss of the SiC power MOSFET was smaller than that of the Si power MOSFET at 1-MHz frequency operation.
Description形態: カラー図版あり
Physical characteristics: Original contains color illustrations
Keywordspower MOSFET; static characteristic; dynamic characteristic; high-speed operation
Document TypeDepartmental Bulletin Paper
NASA Subject CategoryElectronics and Electrical Engineering

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