| タイトル | SiCパワーMOSFETの静特性/動特性評価 |
| その他のタイトル | Static and dynamic characterization of Silicon carbide power-MOSFET |
| 著者（日） | 佐藤, 宣夫; 山本, 秀和 |
| 著者（英） | Satoh, Nobuo; Yamamoto, Hidekazu |
| 著者所属（日） | 千葉工業大学; 千葉工業大学 |
| 著者所属（英） | Chiba Institute of Technology; Chiba Institute of Technology |
| 発行日 | 2015-01-01 |
| 発行機関など | 千葉工業大学
Chiba Institute of Technology |
| 刊行物名 | 千葉工業大学研究報告
Report of Chiba Insitute of Technology |
| 号 | 62 |
| 開始ページ | 23 |
| 終了ページ | 27 |
| 刊行年月日 | 2015-01-01 |
| 言語 | jpn
eng |
| 抄録 | We evaluated and compared the dynamic properties of the megahertz switching of two kinds of commercial valve devices during high-speed operation. The two devices were a silicon （Si） power MOSFET （2SK2847, Toshiba） and a silicon carbide （SiC） power MOSFET （SCT2080KE, Rohm）. Because the purpose for both the use and the package side were similar, our focus was mainly on how the Si and SiC materials contributed to the device performance. We evaluated the conversion efficiency in terms of both the energizing loss and the switching loss. Results showed that the SiC power MOSFET had a high withstand voltage and a high threshold voltage and that the electrical resistance of the conduction state was smaller than that of the Si power-MOSFET. The experimentally obtained switching loss of the SiC power MOSFET was smaller than that of the Si power MOSFET at 1-MHz frequency operation. |
| 内容記述 | 形態: カラー図版あり
Physical characteristics: Original contains color illustrations |
| キーワード | power MOSFET; static characteristic; dynamic characteristic; high-speed operation |
| 資料種別 | Departmental Bulletin Paper |
| NASA分類 | Electronics and Electrical Engineering |
| SHI-NO | AA1540397000 |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/558211 |
