title | SiC結晶中の積層欠陥の透過電子顕微鏡による構造解析 |
Other Title | Evaluation of Stacking Faults in SiC Crystal by Transmission Electron Microscope |
Author(jpn) | 山本, 秀和; 白鳥, 美帆 |
Author(eng) | Yamamoto, Hidekazu; Shiratori, Miho |
Author Affiliation(jpn) | 千葉工業大学; ‐ |
Author Affiliation(eng) | Chiba Institute of Technology; ‐ |
Issue Date | 2016-01-01 |
Publisher | 千葉工業大学 Chiba Institute of Technology |
Publication title | 千葉工業大学研究報告 Report of Chiba Insitute of Technology |
Issue | 63 |
Start page | 23 |
End page | 28 |
Publication date | 2016-01-01 |
Language | jpn eng |
Abstract | Silicon carbide (SiC), which represents a class of wide bandgap semiconductors, is a highly promising crystalline material for power devices and is expected to replace single-crystal Si in next-generation power devices. We previously reported that X-ray topography, photoluminescence (PL) spectroscopy, mirror electron microscopy (MEM), and atomic force microscopy (AFM) are effective for the evaluation of stacking faults in SiC crystal. However, there was a stacking fault that was detected by PL spectroscopy and MEM but was undetected by X-ray topography. In this work, we performed detailed X-ray topography and transmission electron microscopy (TEM) evaluations of SiC stacking faults and found that Shockley type, Frank type, and mixed type stacking faults are detected by X-ray topography. The stacking faults that were detected by PL spectroscopy but not by X-ray topography are not disturbed the periodicity of SiC crystal. |
Description | 形態: カラー図版あり Physical characteristics: Original contains color illustrations |
Keywords | ワイドギャップ半導体パワーデバイス; 積層欠陥; X線トポグラフィ; 透過電子顕微鏡(TEM); SiC |
Document Type | Departmental Bulletin Paper |
NASA Subject Category | Solid-State Physics |
SHI-NO | AA1540466000 |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/558843 |