JAXA Repository / AIREX 未来へ続く、宙(そら)への英知
Other TitleEvaluation of Stacking Faults in SiC Crystal by Transmission Electron Microscope
Author(jpn)山本, 秀和; 白鳥, 美帆
Author(eng)Yamamoto, Hidekazu; Shiratori, Miho
Author Affiliation(jpn)千葉工業大学; ‐
Author Affiliation(eng)Chiba Institute of Technology; ‐
Issue Date2016-01-01
Chiba Institute of Technology
Publication title千葉工業大学研究報告
Report of Chiba Insitute of Technology
Start page23
End page28
Publication date2016-01-01
AbstractSilicon carbide (SiC), which represents a class of wide bandgap semiconductors, is a highly promising crystalline material for power devices and is expected to replace single-crystal Si in next-generation power devices. We previously reported that X-ray topography, photoluminescence (PL) spectroscopy, mirror electron microscopy (MEM), and atomic force microscopy (AFM) are effective for the evaluation of stacking faults in SiC crystal. However, there was a stacking fault that was detected by PL spectroscopy and MEM but was undetected by X-ray topography. In this work, we performed detailed X-ray topography and transmission electron microscopy (TEM) evaluations of SiC stacking faults and found that Shockley type, Frank type, and mixed type stacking faults are detected by X-ray topography. The stacking faults that were detected by PL spectroscopy but not by X-ray topography are not disturbed the periodicity of SiC crystal.
Description形態: カラー図版あり
Physical characteristics: Original contains color illustrations
Keywordsワイドギャップ半導体パワーデバイス; 積層欠陥; X線トポグラフィ; 透過電子顕微鏡(TEM); SiC
Document TypeDepartmental Bulletin Paper
NASA Subject CategorySolid-State Physics

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