SiC結晶中の積層欠陥の透過電子顕微鏡による構造解析

Abstract

Silicon carbide （SiC）, which represents a class of wide bandgap semiconductors, is a highly promising crystalline material for power devices and is expected to replace single-crystal Si in next-generation power devices. We previously reported that X-ray topography, photoluminescence （PL） spectroscopy, mirror electron microscopy （MEM）, and atomic force microscopy （AFM） are effective for the evaluation of stacking faults in SiC crystal. However, there was a stacking fault that was detected by PL spectroscopy and MEM but was undetected by X-ray topography. In this work, we performed detailed X-ray topography and transmission electron microscopy （TEM） evaluations of SiC stacking faults and found that Shockley type, Frank type, and mixed type stacking faults are detected by X-ray topography. The stacking faults that were detected by PL spectroscopy but not by X-ray topography are not disturbed the periodicity of SiC crystal.