JAXA Repository / AIREX 未来へ続く、宙(そら)への英知
titleRF マグネトロンスパッタ法によるAZO透明導電膜の結晶性に及ぼす基板温度の影響: 材料分析室利用研究成果, そのXXVI(4)
Other TitleEffect of substrate temperature on the crystalline of transparent conducting AZO thin films by RF magnetron sputtering: Research works accomplished by using materials analysis facilities: XXVI (4)
Author(jpn)後藤, みき; 小松, 茂禎; 御園生, 誠
Author(eng)Goto, Miki; Komatsu, Shigeyoshi; Misonoo, Makoto
Author Affiliation(jpn)神奈川工科大学; 神奈川工科大学; 神奈川工科大学
Author Affiliation(eng)Kanagawa Institute of Technology; Kanagawa Institute of Technology; Kanagawa Institute of Technology
Issue Date2016-03-20
Kanagawa Institute of Technology
Publication title神奈川工科大学研究報告
Research Reports of Kanagawa Institute of Technology
Start page61
End page63
Publication date2016-03-20
AbstractWe have studied the effect of the substrate temperature on the crystalline structure, optical and electrical properties of AZO films. The AZO thin films have been fabricated by RF magnetron sputtering technique with various substrate temperatures of growth parameters. The target was AZO (Al2O3, 2wt% in ZnO). The resistivity, transmittance and crystal orientation of these films were investigated as a function of various substrate temperatures. As a result, a minimum resistivity of 2×10(exp -4) Ωcm and an average transmittance of about 80% in the visible range were obtained for the films deposited at sputtering gas Ar : pressure of 2 Pa, flow rate of 5 sccm, and substrate temperature of 400 C. The crystalline structure of the films was confirmed by X-ray diffraction (XRD) analysis. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation.
Description形態: カラー図版あり
Physical characteristics: Original contains color illustrations
KeywordsAZO thin films; transparent conducting films; substrate temperature; RF magnetron sputtering; XRD
Document TypeDepartmental Bulletin Paper
NASA Subject CategoryElectronics and Electrical Engineering

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