| タイトル | Effects of impurities on silicon solar-cell performance |
| 本文（外部サイト） | http://hdl.handle.net/2060/19860017208 |
| 著者（英） | Hopkins, R. H. |
| 著者所属（英） | Westinghouse Research and Development Center |
| 発行日 | 1986-02-01 |
| 言語 | eng |
| 内容記述 | Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 86N26680 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/566067 |
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