| タイトル | Oxygen and carbon impurities and related defects in silicon |
| 本文（外部サイト） | http://hdl.handle.net/2060/19850023318 |
| 著者（英） | Pearce, C. W. |
| 著者所属（英） | American Telephone and Telegraph Technology Systems |
| 発行日 | 1985-05-15 |
| 言語 | eng |
| 内容記述 | Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented. |
| NASA分類 | INORGANIC AND PHYSICAL CHEMISTRY |
| レポートNO | 85N31631 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/566844 |
