| タイトル | Silicon MINP solar cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19850023310 |
| 著者（英） | Addis, F. W.; Miller, W. A.; Olsen, L. C. |
| 著者所属（英） | Joint Center for Graduate Study |
| 発行日 | 1985-05-15 |
| 言語 | eng |
| 内容記述 | The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 85N31623 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/566852 |
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