| タイトル | Advanced Czohcralski ingot growth |
| 本文（外部サイト） | http://hdl.handle.net/2060/19830002239 |
| 著者（英） | Lane, R. L. |
| 著者所属（英） | Kayex Corp. |
| 発行日 | 1982-04-01 |
| 言語 | eng |
| 内容記述 | A summary of advanced Cz ingot-growth activities is presented. Five ingots (totalling 150 kg) were grown from one crucible by use of chunk silicon replenishment between ingot pulls. The cost of the ingot growth was reduced from $80/kg (conventional Cz growth) to $20/kg. Further improvements can be made by achieving a better understanding of crystalline silicon growth and the influence on growth of contaminants from the atmosphere and/or the crucible. This should lead to a higher percentage of monocrystalline growth and possible increased growth rates. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 83N10509 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/567562 |
