| タイトル | Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory |
| 本文（外部サイト） | http://hdl.handle.net/2060/20160009116 |
| 著者（英） | LaBel, Kenneth; Ladbury, Raymond; Phan, Anthony; Seidleck, Christina; Wilcox, Edward; Chen, Dakai; Kim, Hak |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2016-07-11 |
| 言語 | eng |
| 内容記述 | We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate. |
| NASA分類 | Space Radiation; Electronics and Electrical Engineering |
| レポートNO | GSFC-E-DAA-TN33478 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
