| タイトル | ライフタイム測定によるシリコンデバイス製造ラインの重金属汚染評価 |
| その他のタイトル | Evaluation of Heavy Metal Contamination in Silicon Device Production Line by Lifetime Measurements |
| 著者（日） | 山本, 秀和 |
| 著者（英） | Yamamoto, Hidekazu |
| 著者所属（日） | 千葉工業大学 |
| 著者所属（英） | Chiba Institute of Technology |
| 発行日 | 2017-01-01 |
| 発行機関など | 千葉工業大学
Chiba Institute of Technology |
| 刊行物名 | 千葉工業大学研究報告
Report of Chiba Insitute of Technology |
| 号 | 64 |
| 開始ページ | 29 |
| 終了ページ | 33 |
| 刊行年月日 | 2017-01-01 |
| 言語 | jpn
eng |
| 抄録 | I investigated the control of metal contamination in a high temperature process by means of a μPCD method. Results showed that in a roughly 1000C process, the μPCD method is very sensitive for metal contamination, and that chemical passivation is a very effective way of improving sensitivity. However, in a roughly 1200C process, a shorter effective lifetime is observed, and this is not improved by chemical passivation. This demonstrates that the μPCD method is not suitable for highly sensitive control of metal contamination in a high temperature process. |
| 内容記述 | 形態: カラー図版あり
Physical characteristics: Original contains color illustrations |
| キーワード | μPCD法; 高温熱処理; 金属汚染; リーク不良 |
| 資料種別 | Departmental Bulletin Paper |
| NASA分類 | Nonmetallic Materials |
| SHI-NO | AA1640294000 |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/586821 |
