JAXA Repository / AIREX 未来へ続く、宙(そら)への英知
titleライフタイム測定によるシリコンデバイス製造ラインの重金属汚染評価
Other TitleEvaluation of Heavy Metal Contamination in Silicon Device Production Line by Lifetime Measurements
Author(jpn)山本, 秀和
Author(eng)Yamamoto, Hidekazu
Author Affiliation(jpn)千葉工業大学
Author Affiliation(eng)Chiba Institute of Technology
Issue Date2017-01-01
Publisher千葉工業大学
Chiba Institute of Technology
Publication title千葉工業大学研究報告
Report of Chiba Insitute of Technology
Issue64
Start page29
End page33
Publication date2017-01-01
Languagejpn
eng
AbstractI investigated the control of metal contamination in a high temperature process by means of a μPCD method. Results showed that in a roughly 1000C process, the μPCD method is very sensitive for metal contamination, and that chemical passivation is a very effective way of improving sensitivity. However, in a roughly 1200C process, a shorter effective lifetime is observed, and this is not improved by chemical passivation. This demonstrates that the μPCD method is not suitable for highly sensitive control of metal contamination in a high temperature process.
Description形態: カラー図版あり
Physical characteristics: Original contains color illustrations
KeywordsμPCD法; 高温熱処理; 金属汚染; リーク不良
Document TypeDepartmental Bulletin Paper
NASA Subject CategoryNonmetallic Materials
SHI-NOAA1640294000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/586821


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