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タイトルA Study of Thick PMMA Film Etching by the Method of Combined Deep X-Ray Lithography and Thermal Development
DOIinfo:doi/10.15017/1515846
本文(外部サイト)https://catalog.lib.kyushu-u.ac.jp/opac_download_md/1515846/p141.pdf
参考URLhttp://hdl.handle.net/2324/1515846
著者(英)Fujimura, Tsuyoshi; Kuroki, Yukinori; Ikeda, Akihiro; Etoh, Shin-ichi; Eto, Shinichi; Hattori, Reiji; Hidaka, Masanori; Chang, Suk Sang
発行日2015-06-03
発行機関など九州大学大学院システム情報科学研究院
刊行物名九州大学大学院システム情報科学紀要
8
2
開始ページ141
終了ページ146
刊行年月日2003-09-26
言語eng
内容記述For mass-production of three-dimensional fine structures, photolithography using deep X-ray with very short wavelength from a synchrotron radiation (SR) light source is a good method. After SR irradiation, the X-ray exposure mask pattern is engraved into the surface of the polymethylmethacrylate (PMMA) thick film. Then additional heat treatment, that is thermal development, etches the depth of the engraved area deeper. This sequential process is a direct and dry etching method. Maximum depth which is reached by the thermal development corresponds to the existent depth of the small-size molecules which can scatter easily to the air. Especially, SR light, compared to long wavelength light, can make the molecules small in the complete volume irradiated, not only near the surface but also near the bottom. The etching rate of thermal development was related to the size of the molecules and to the composition of the film which were estimated from molecular weight (M.W.) and density measurement, respectively. The etching rate accelerated under higher temperature of 135℃ and lower pressure of 0.1 kPa. A microchannel with 15-μm-depth and 50-μm-width was formed on the surface of a thick PMMA film with a thickness of 20 μm.
キーワードSynchrotron radiation light; Direct fabrication process; Deep X-ray lithography; Photoetching; Thermal development; Dry etching; Polymethylmethacrylate; Gel permeation chromatography
資料種別Departmental Bulletin Paper
著者版フラグpublisher
ISSN1342-3819
2188-0891
NCIDAN10569524


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