| タイトル | Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors |
| 本文（外部サイト） | http://hdl.handle.net/2060/20150003114 |
| 著者（英） | Su, Ching-Hua |
| 著者所属（英） | NASA Headquarters |
| 発行日 | 2013-09-17 |
| 言語 | eng |
| 内容記述 | The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
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