| タイトル | Insulation Resistance Degradation in Ni-BaTiO3 Multilayer Ceramic Capacitors |
| 本文（外部サイト） | http://hdl.handle.net/2060/20150002117 |
| 著者（英） | Liu, Donhang David |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2015-01-01 |
| 言語 | eng |
| 内容記述 | Insulation resistance (IR) degradation in NiBaTiO3 multilayer ceramic capacitors has been characterized by the measurement of both time to failure (TTF) and direct current leakage current as a function of stress time under highly accelerated life test conditions. The measured leakage current time dependence data fit well to an exponential form, and a characteristic growth time tau (sub SD) can be determined. A greater value of tau (sub SD) represents a slower IR degradation process. Oxygen vacancy migration and localization at the grain boundary region results in the reduction of the Schottky barrier height and has been found to be the main reason for IR degradation in NiBaTiO3 capacitors. The reduction of barrier height as a function oftime follows an exponential relation of phi (t ) = phi (0) e (exp -2Kt), where 13 the degradation rate constant K Koe (Ek/kT) is inversely proportional to the mean TTF (MTTF) and can be determined using an Arrhenius plot. For oxygen vacancy electromigration, a lower barrier height phi (0) will favor a slow IR degradation process, but a lower phi (0) will also promote electronic carrier conduction across the barrier and decrease the IR. As a result, a moderate barrier height phi (0) (and therefore a moderate IR value) with a longer MTTF (smaller degradation rate constant K) will result in a minimized IR degradation process and the most improved reliability in NiBaTiO3 multilayer ceramic capacitors. |
| NASA分類 | Quality Assurance and Reliability; Electronics and Electrical Engineering |
| レポートNO | GSFC-E-DAA-TN19926 |
| 権利 | Copyright, Distribution under U.S. Government purpose rights |
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