| タイトル | 960mV open circuit voltage chalcopyrite solar cell |
| その他のタイトル | 960mV open circuit voltage chalcopyrite solar cell |
| DOI | 10.1109/PVSC.2015.7355655 |
| 参考URL | http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100702456 |
| 著者（日） | 廣井, 誉 |
| 著者（英） | Hiroi, Homare |
| 発行日 | 2016-03-08 |
| 発行機関など | IEEE |
| 刊行年月日 | 2015-06 |
| 言語 | en |
| 内容記述 | Open circuit voltage of 960mV on chalcopyrite solar cell was achieved by pure-sulfide CuInGaS2 solar cell. Generally, high performance CuInGaS2 needs KCN-etching treatment to remove CuS layer, however, we could fabricate it without KCN-etching treatment. Additionally, Cd-free buffer layer was applied for current density improvement and the champion cell demonstrated over 14% efficiency. In this paper, the latest results for high performance pure-sulfide CuInGaS2 cells will be presented. |
| キーワード | Se-free CIGS solar cells |
| 資料種別 | Conference Paper |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/608631 |
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