| タイトル | High efficiency pure-sulfide Cu(In,Ga)S2 solar cells with Cd-free buffer layer |
| その他のタイトル | High efficiency pure-sulfide Cu(In,Ga)S2 solar cells with Cd-free buffer layer |
| 参考URL | http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100705386 |
| 著者（日） | 廣井, 誉; 山田, 明 |
| 著者（英） | Hiroi, Homare; YAMADA, AKIRA |
| 発行日 | 2016-05-20 |
| 刊行年月日 | 2016-05 |
| 言語 | en |
| 内容記述 | A conversion efficiency of 15.5% on a pure-sulfide Cu(In,Ga)S2 solar cell with a Cd-free buffer layer was achieved. This is a big progress of pure-sulfide Cu(In,Ga)S2 cells whose conversion efficiency have not been improved since 2009. Our pure-sulfide Cu(In,Ga)S2 cells were fabricated by combing Cu-poor absorbers and Zn-based buffer layers. Current breakthrough to exceed the limit of 15% efficiency was brought by optimizing the Zn-based buffer layer. In this paper, we will review our recent progresses of our pure-sulfide Cu(In,Ga)S2 cells, especially in the impact of buffer layers for the pure-sulfide Cu(In,Ga)S2 cells. We keep exploring the potential of pure-sulfide Cu(In,Ga)S2 cells, and the latest results will be shown at the conference. |
| 資料種別 | Conference Paper |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/609045 |
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