タイトル | Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors: Experiments at the International Space Station and on Earth |
DOI | info:doi/10.15011//jasma.34.340111 |
著者(日) | 早川, 泰弘; Nirmal Kumar, Velu; Arivanandhan, Mukannan; Rajesh, Govindasamy; 小山, 忠信; 百瀬, 与志美; 阪田, 薫穂; 小澤, 哲夫; 岡野, 泰則; 稲富, 裕光 |
著者(英) | Hayakawa, Yasuhiro; Nirmal Kumar, Velu; Arivanandhan, Mukannan; Rajesh, Govindasamy; Koyama, Tadanobu; Momose, Yoshimi; Sakata, Kaoruho; Ozawa, Tetsuo; Okano, Yasunori; Inatomi, Yuko |
著者所属(日) | 静岡大学電子工学研究所; 静岡大学電子工学研究所; Centre for Nanoscience and Technology, Anna University; 静岡大学電子工学研究所; 静岡大学電子工学研究所; 静岡大学電子工学研究所; 東京大学; 静岡理工科大学; 大阪大学 : 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 静岡大学電子工学研究所; 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 総合研究大学院大学(SOKENDAI) : 静岡大学電子工学研究所 |
著者所属(英) | Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; Centre for Nanoscience and Technology, Anna University; Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; The University of Tokyo; Shizuoka Institute of Science and Technology; Osaka University : Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS) : Research Institute of Electronics, Shizuoka University; Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS) : The Graduate University for Advanced Studies (SOKENDAI) : Research Institute of Electronics, Shizuoka University |
発行日 | 2017-01-31 |
発行機関など | Japan Society of Microgravity Application (JASMA) 日本マイクログラビティ応用学会(JASMA) |
刊行物名 | International Journal of Microgravity Science and Application (IJMSA) |
巻 | 34 |
号 | 1 |
開始ページ | 340111-1 |
終了ページ | 340111-12 |
刊行年月日 | 2017-01-31 |
言語 | eng |
抄録 | The manuscript reviews the microgravity experiments carried out onboard the International Space Station (ISS) to study the effects of gravity and orientation on the dissolution and growth properties of InGaSb ternary alloys. To study the effect of gravity, similar growth experiments were conducted under microgravity and normal gravity conditions. The effect of orientation was studied by the growth of InGaSb from (111)A and (111)B faces of GaSb (Ga and Sb faces) under microgravity onboard the ISS. The experimental results revealed that the growth rate was higher with better quality of crystal under microgravity than normal gravity. A model was proposed to explain the higher dissolution of GaSb (111)B than (111)A direction under microgravity. The higher growth rate of InGaSb from GaSb (111)B was found to be because of its higher dissolution of GaSb(111)B feed. |
内容記述 | Physical characteristics: Original contains color illustrations 形態: カラー図版あり |
キーワード | InGaSb; crystal growth; gravity; crystal orientation; ISS |
資料種別 | Journal Article |
NASA分類 | Space Processing |
ISSN | 0915-3616 |
NCID | AN10537663 |
SHI-NO | AA1740126000 |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/615290 |
|