A Numerical Study on the Dissolution Process of InGaSb under Zero Gravity

Abstract

In(x)Ga(1-x)Sb bulk crystals have been grown on the International Space Station using a GaSb (feed) / InSb / GaSb (seed) sandwich-structured sample. In order to gain a deeper insight into the transport phenomenon and the relevant fundamental mechanisms during the dissolution process of InGaSb in this system, four numerical simulations with different temperature conditions and under the assumption of zero gravity were performed by the volume-averaging continuum model. Simulation results showed the heat loss through the bottom wall did not affect the final feed/seed dissolution lengths and the grown crystal interface shape. The final dissolution lengths of the feed and seed crystals were determined by the temperature calculated along the seed interface. The results also indicate that the actual temperature of the growth ampoule should be around 3K lower than that measured on the outside the protective cartridge.