| タイトル | Reaction and Protection of Electrical Wire Insulators in Atomic-oxygen Environments |
| 本文（外部サイト） | http://hdl.handle.net/2060/19950010860 |
| 著者（英） | Hung, Ching-Cheh; Cantrell, Gidget |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1994-11-01 |
| 言語 | eng |
| 内容記述 | Atomic-oxygen erosion on spacecraft in low Earth orbit is an issue which is becoming increasingly important because of the growing number of spacecraft that will fly in the orbits which have high concentrations of atomic oxygen. In this investigation, the atomic-oxygen durability of three types of electrical wire insulation (carbon-based, fluoropolymer, and polysiloxane elastomer) were evaluated. These insulation materials were exposed to thermal-energy atomic oxygen, which was obtained by RF excitation of air at a pressure of 11-20 Pa. The effects of atomic-oxygen exposure on insulation materials indicate that all carbon-based materials erode at about the same rate as polyamide Kapton and, therefore, are not atomic-oxygen durable. However, the durability of fluoropolymers needs to be evaluated on a case by case basis because the erosion rates of fluoropolymers vary widely. For example, experimental data suggest the formation of atomic fluorine during atomic-oxygen amorphous-fluorocarbon reactions. Dimethyl polysiloxanes (silicone) do not lose mass during atomic-oxygen exposure, but develop silica surfaces which are under tension and frequently crack as a result of loss of methyl groups. However, if the silicone sample surfaces were properly pretreated to provide a certain roughness, atomic oxygen exposure resulted in a sturdy, non-cracked atomic-oxygen durable SiO2 layer. Since the surface does not crack during such silicone-atomic oxygen reaction, the crack-induced contamination by silicone can be reduced or completely stopped. Therefore, with proper pretreatment, silicone can be either a wire insulation material or a coating on wire insulation materials to provide atomic-oxygen durability. |
| NASA分類 | SPACECRAFT DESIGN, TESTING AND PERFORMANCE |
| レポートNO | 95N17275
NASA-TM-106767
E-9210
NAS 1.15:106767 |
| 権利 | No Copyright |
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