| タイトル | High-quality Silicon Films Prepared by Zone-melting Recrystallization |
| 著者（英） | Fan, J. C. C.; Geis, M. W.; Chen, C. K.; Tsaur, B. Y. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1984-04-15 |
| 言語 | eng |
| 内容記述 | The graphite strip heater zone melting recrystallization (ZMR) technique is described. The material properties of the ZMR films, and SOI device results are reviewed. Although our ZMR work is primarily motivated by integrated circuit applications, this work evolved in part from earlier research on laser crystallization of thick amorphous GaAs and Si films, which was undertaken with the goal of producing low cost photovoltaic materials. The ZMR growth process and its effect on the properties of the recrystallized films may contribute some insight to a general understanding of the rapid recrystallization of Si for solar cells. Adaptation of ZMR for solar cell fabrication is considered. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 84N28638 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/67864 |
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