| タイトル | Infrared Rugates by Molecular Beam Epitaxy |
| 本文（外部サイト） | http://hdl.handle.net/2060/19930019619 |
| 著者（英） | Rona, M. |
| 著者所属（英） | Little (Arthur D.), Inc. |
| 発行日 | 1993-01-01 |
| 言語 | eng |
| 内容記述 | Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film. |
| NASA分類 | OPTICS |
| レポートNO | 93N28808 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/68791 |
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