| タイトル | Charge Islands Through Tunneling |
| 本文（外部サイト） | http://hdl.handle.net/2060/20020038756 |
| 著者（英） | Robinson, Daryl C. |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2002-02-01 |
| 言語 | eng |
| 内容記述 | It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited. |
| NASA分類 | Electronics and Electrical Engineering |
| レポートNO | NAS 1.15:211086
E-12930-1
NASA/TM-2002-211086 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/91823 |
