| タイトル | Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter |
| 本文（外部サイト） | http://hdl.handle.net/2060/20020024067 |
| 著者（英） | VanKeuls, Fred; Vignesparamoorthy, Sivaruban; Mueller, Carl; Warner, Joseph; Miranda, Felix A.; Subramanyam, Guru |
| 著者所属（英） | NASA Glenn Research Center |
| 発行日 | 2001-01-01 |
| 言語 | eng |
| 内容記述 | The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/92030 |
