| タイトル | 'Atomistic' Simulation of Decanano Devices |
| 本文（外部サイト） | http://hdl.handle.net/2060/20010006025 |
| 著者（英） | Davies, J. H.; Brown, A. R.; Slavcheva, G.; Asenov, Asen; Saini, Subhash; Kaya, S. |
| 著者所属（英） | NASA Ames Research Center |
| 発行日 | 2000-01-01 |
| 言語 | eng |
| 内容記述 | When the devices are scaled to decanano dimensions the discreteness of charge and matter introduces significant 'intrinsic' parameter fluctuations. Atomic level 3D process and device modelling on statistical scale is required to understand the effects, the scale of the fluctuations and to design fluctuation resistant devices. |
| NASA分類 | Instrumentation and Photography |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/93576 |
