| タイトル | 160-190 GHz Monolithic Low Noise Amplifiers |
| 本文（外部サイト） | http://hdl.handle.net/2060/20000064073 |
| 著者（英） | Chen, Y. C.; Liu, P. H.; Lai, R.; Wang, H.; Allen, B. R.; Barsky, Mike; Sholley, M.; Huang, T. W.; Block, T.; Streit, D. C.; Gaier, T.; Kok, Y. L.; Samoska, L. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1998-01-01 |
| 言語 | eng |
| 内容記述 | This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/94348 |
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